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| BFR380F NPN Silicon RF Transistor Preliminary data High current capability and low figure for wide dynamic range application Low voltage operation Ideal for low phase noise oscillators up to 3.5 GHz Low noise figure: 1.1 dB at 1.8 GHz 3 1 2 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type BFR380F Maximum Ratings Parameter Marking FCs Pin Configuration 1=B 2=E 3=C Symbol VCEO VCES VCBO VEBO IC IB Ptot Tj TA Tstg Symbol RthJS Value Package TSFP-3 Unit Collector-emitter voltage Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Base current Total power dissipation1) Junction temperature Ambient temperature Storage temperature Thermal Resistance Parameter TS 6 15 15 2 80 14 380 150 -65 ... 150 -65 ... 150 Value V mA mW C 95C 1T is measured on the collector lead at the soldering point to the pcb S 2For calculation of R please refer to Application Note Thermal Resistance thJA 1 Junction - soldering point2) Unit 145 K/W Jan-24-2003 BFR380F Electrical Characteristics at TA = 25C, unless otherwise specified Parameter Characteristics Collector-emitter breakdown voltage IC = 1 mA, IB = 0 Collector-base cutoff current VCB = 5 V, IE = 0 Emitter-base cutoff current VEB = 1 V, IC = 0 DC current gainIC = 40 mA, VCE = 3 V hFE 60 100 200 IEBO 1 A ICBO 100 nA V(BR)CEO 6 9 V Symbol min. Values typ. max. Unit 2 Jan-24-2003 BFR380F Electrical Characteristics at TA = 25C, unless otherwise specified Parameter Symbol Values min. typ. max. AC Characteristics (verified by random sampling) Transition frequency fT IC = 40 mA, VCE = 3 V, f = 1 GHz Unit 11 - 14 0.47 0.2 1 1.1 0.7 - GHz pF Collector-base capacitance VCB = 5 V, f = 1 MHz, emitter grounded Ccb Cce Ceb Fmin Collector emitter capacitance VCE = 5 V, f = 1 MHz, base grounded Emitter-base capacitance VEB = 0.5 V, f = 1 MHz, collector grounded Noise figure IC = 8 mA, VCE = 3 V, ZS = ZSopt , f = 1.8 GHz dB Power gain, maximum available1) IC = 40 mA, VCE = 3 V, ZS = ZSopt , ZL = ZLopt , f = 1.8 GHz IC = 40 mA, VCE = 3 V, ZS = ZSopt , ZL = ZLopt , f = 3 GHz Gma |S21|2 IP3 13.5 9 dB Insertion power gain VCE = 3 V, IC = 40 mA, f = 1.8 GHz, ZS = ZL = 50 VCE = 3 V, IC = 40 mA, f = 3 GHz, ZS = ZL = 50 11 6.5 29 dBm Third order intercept point at output2) VCE = 3 V, IC = 40 mA, f = 1.8 GHz, ZS = ZL = 50 - 1dB Compression point at output3) IC = 40 mA, VCE = 3 V, ZS = ZL = 50 , f = 1.8 GHz 1G 1/2 ma = |S21 / S12| (k-(k-1) ) P-1dB - 16 - 2IP3 value depends on termination of all intermodulation frequency components. Termination used for this measurement is 50 from 0.1 MHz to 6 GHz 3DC current at no input power 3 Jan-24-2003 BFR380F SPICE Parameter (Gummel-Poon Model, Berkley-SPICE 2G.6 Syntax): Transitor Chip Data: 9.965 fA IS = BF = IKF = BR = IKR = RB = RE = VJE = XTF = PTF = MJC = CJS = NK = FC = 116.376 736 22.802 0.011 9.71 221 0.782 0.496 0 0.472 0 0.5 0.975 mA A m V deg fF - NF = ISE = NR = ISC = IRB = RC = MJE = VTF = CJC = XCJC = VJS = EG = TNOM 1.107 0.2676 1.056 6.9739 0.2564 0.101 0.5 0.338 840 0.202 0.75 1.11 300 fA pA mA - VAF = NE = VAR = NC = RBM = CJE = TF = ITF = VJC = TR = MJS = XTI = 27.69 1.64 30 1.678 1.322 116.7 8.789 1.529 6.949 6.949 0 0 V V fF ps mA V ns - V fF V eV K All parameters are ready to use, no scalling is necessary. Extracted on behalf of Infineon Technologies AG by: Institut fur Mobil- und Satellitentechnik (IMST) Package Equivalent Circuit: C4 C1 L2 B L3 C L1 = L2 = L3 = C' 0.556 0.675 0.381 43 123 66 10 36 47 nH nH nH fF fF fF fF fF fF B' Transistor Chip E' C1 = C2 = C3 = C4 = C5 = C6 = EHA07524 C6 C2 L1 C3 C5 E Valid up to 6GHz For examples and ready to use parameters please contact your local Infineon Technologies distributor or sales office to obtain a Infineon Technologies CD-ROM or see Internet: http//www.infineon.com/silicondiscretes 4 Jan-24-2003 BFR380F Total power dissipation Ptot = (TS ) Permissible Pulse Load RthJS = (tp ) 400 mW 300 250 RthJS 10 2 P tot 200 150 100 50 10 1 -7 10 0 0 15 30 45 60 75 90 105 120 C 10 1 Ptotmax/PtotDC Ccb 10 0 -7 10 10 -6 10 Ptotmax/PtotDC = (tp) f = 1MHz 1.6 pF D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 1.2 1 0.8 0.6 0.4 0.2 -5 10 -4 10 -3 10 -2 s 10 0 0 0 2 4 6 8 10 12 tp 5 Jan-24-2003 Permissible Pulse Load 10 3 K/W 0.5 0.2 0.1 0.05 0.02 0.01 0.005 D=0 150 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 0 TS tp Collector-base capacitance Ccb = (VCB ) V 16 VCB BFR380F Third order Intercept Point IP3=(IC) Transition frequency fT= (IC) f = 1GHz (Output, ZS=ZL=50) VCE = parameter, f = 1.8GHz 32 dBm 28 26 24 4V 3V VCE = parameter 16 GHz 14 13 12 5V 3V 2V IP 3 fT 22 20 18 16 14 12 10 8 6 4 0 10 20 30 40 50 60 70 mA 2V 11 10 1V 9 8 7 6 5 90 4 0 10 20 30 40 50 60 70 1V 0.7V 80 mA 100 IC IC f = 0.9GHz VCE = parameter 21 dB f = 1.8GHz VCE = parameter 15 dB 5V 19 3V 13 3V G 17 G 18 2V 12 11 1V 16 1V 10 15 9 0.7V 14 0.7V 8 13 0 10 20 30 40 50 60 70 80 mA 100 7 0 10 20 30 40 50 IC 6 Power gain Gma, Gms = (IC ) Power gain Gma, Gms = (IC) 5V 2V 60 70 80 mA 100 IC Jan-24-2003 BFR380F 2 VCE = parameter 45 dB Ic = 40mA 35 30 G 25 20 G 15 10 5 0 0 10 0.5 1 1.5 2 2.5 f = parameter 21 Ic = 40mA dB 19 18 17 16 G 15 14 13 12 11 10 9 8 7 0 1 2 3 4 5 6 V 1.8GHz 1.8GHz G |S21| = (VCE): - - - - VCE = 2V f = parameter 20 dB 0.9GHz 17 0.9GHz 16 15 14 13 12 11 10 9 8 7 6 8 5 0 20 40 60 80 4GHz mA 2.4GHz 3GHz 1.8GHz VCE 7 Power Gain Gma, Gms = Power Gain Gma, Gms = (f) Power Gain |S21| = VCE = parameter 40 dB Ic = 40mA (f) 30 5V 2V 1V 0.7V 25 20 5V 2V 1V 0.7V 15 5 3 3.5 GHz 4.5 0 0 0.5 1 1.5 2.5 3 3.5 GHz 4.5 f f (VCE ): Power gain Gma, Gms = (IC ) 0.9GHz 110 IC Jan-24-2003 BFR380F Noise figure NF = (IC ) Source impedance for min. VCE = 3V, f = 1,8 GHz 4 dB noise figure vs. frequency VCE = 3 V +j50 +j25 +j100 3.2 F50 +j10 F 2.8 0.9GHz 2.4 0 1.8GHz 10 2.4GHz 25 50 100 2 Fmin 3GHz -j10 1.6 4GHz 8mA 40mA -j100 -j50 1.2 -j25 0.8 0 10 20 30 40 50 60 70 mA 90 IC 8 Jan-24-2003 |
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